Three-quarter view of low-boron HEPA filter for semiconductor cleanrooms

Filtros de ar e filtragem química

Z Filtro HEPA de baixo boro

A semiconductor-oriented HEPA panel using ePTFE or specially selected low-boron media and low-outgassing components to reduce airborne ionic contamination near sensitive processes.

Low-Boron Media Selection
Low-Outgassing Components
Semiconductor Cleanroom Use
Mini-Pleat Panel Design

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Introdução do produto

The low-boron HEPA filter is designed for cleanroom zones where conventional borosilicate glass media may contribute trace ionic contaminants. A supported ePTFE membrane or qualified low-boron media is formed into a compact mini-pleat pack and bonded into an anodized-aluminium frame. Low-outgassing separators, polyurethane potting and gasket materials are selected to limit avoidable emissions from the assembled filter. The finished panel fits fan filter units, tool enclosures and recirculation modules serving lithography, wafer processing and other contamination-sensitive operations.

Características-chave

ePTFE or selected low-boron media reduces reliance on conventional borosilicate microglass in the active filter pack.

Low-outgassing separators and potting compounds support use close to sensitive wafer and optics processes.

An anodized-aluminium frame provides a clean, non-shedding perimeter with stable seal geometry.

Mini-pleat construction supplies a broad active area within the shallow profile used by cleanroom terminals.

Preocupações do produto do cliente

Trace ionic and molecular emissions from filter materials can matter when the process operates at semiconductor contamination limits.

Conventional microglass media introduces an avoidable boron source near wafer processing.A supported ePTFE or selected low-boron pack removes the standard borosilicate media from the active filtration layer.

Adhesives and separators release volatile compounds into recirculated cleanroom air.Low-outgassing component choices reduce emissions from materials surrounding the filter pack.

Particles are released from unfinished frame surfaces during installation.Smooth anodized aluminium and sealed corners provide a cleanable, non-shedding perimeter.

A process-tool enclosure has limited space for a deep final filter.The shallow mini-pleat format fits common FFU and equipment-terminal depths.

Aplicações típicas

Semiconductor wafer fabricationPhotolithography clean baysFlat-panel display productionHard-disk media manufacturingContamination-sensitive tool mini-environments

Parâmetros técnicos

Typical construction ranges for a low-boron semiconductor HEPA panel are shown below.

Material principal	Supported ePTFE membrane or specially selected low-boron HEPA media
Painel de espessura	66–90 mm overall frame depth
Largura efetiva	305 - 610 mm Largura nominal da face
Comprimento máximo	Até 1220 mm de comprimento nominal do rosto
Aço enfrentando espessura	0.4–0.6 mm low-shedding stainless-steel or coated faceguard
Densidade Core	Approximately 20–35 kg/m³ equivalent membrane-pack density
Condutividade térmica	Approximately 0.031–0.041 W/(m·K) for the dry low-boron membrane pack
Superfície acabado	Natural anodized aluminium with low-outgassing white or stainless protective grid
Tipo conjunto	Polyurethane gel channel, closed-cell gasket or extruded knife-edge seal
Customização	Disponível com base na aplicação pretendida e no ambiente operacional.

Opções disponíveis

H13 or H14 low-boron mediaGel, vedação ou vedação de borda de facaLow-outgassing cleanroom component setOne-sided or two-sided protective grid

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