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Filtres à air et filtration chimique

Filtre HEPA à faible teneur en bore

A semiconductor-oriented HEPA panel using ePTFE or specially selected low-boron media and low-outgassing components to reduce airborne ionic contamination near sensitive processes.
  • Low-Boron Media Selection
  • Low-Outgassing Components
  • Semiconductor Cleanroom Use
  • Mini-Pleat Panel Design
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Introduction de produit

The low-boron HEPA filter is designed for cleanroom zones where conventional borosilicate glass media may contribute trace ionic contaminants. A supported ePTFE membrane or qualified low-boron media is formed into a compact mini-pleat pack and bonded into an anodized-aluminium frame. Low-outgassing separators, polyurethane potting and gasket materials are selected to limit avoidable emissions from the assembled filter. The finished panel fits fan filter units, tool enclosures and recirculation modules serving lithography, wafer processing and other contamination-sensitive operations.

Key Features

ePTFE or selected low-boron media reduces reliance on conventional borosilicate microglass in the active filter pack.

Low-outgassing separators and potting compounds support use close to sensitive wafer and optics processes.

An anodized-aluminium frame provides a clean, non-shedding perimeter with stable seal geometry.

Mini-pleat construction supplies a broad active area within the shallow profile used by cleanroom terminals.

Préoccupations du client produit

Trace ionic and molecular emissions from filter materials can matter when the process operates at semiconductor contamination limits.

Conventional microglass media introduces an avoidable boron source near wafer processing.A supported ePTFE or selected low-boron pack removes the standard borosilicate media from the active filtration layer.
Adhesives and separators release volatile compounds into recirculated cleanroom air.Low-outgassing component choices reduce emissions from materials surrounding the filter pack.
Particles are released from unfinished frame surfaces during installation.Smooth anodized aluminium and sealed corners provide a cleanable, non-shedding perimeter.
A process-tool enclosure has limited space for a deep final filter.The shallow mini-pleat format fits common FFU and equipment-terminal depths.

Les applications typiques

Semiconductor wafer fabricationPhotolithography clean baysFlat-panel display productionHard-disk media manufacturingContamination-sensitive tool mini-environments

Paramètres techniques

Typical construction ranges for a low-boron semiconductor HEPA panel are shown below.

Matériaux de baseSupported ePTFE membrane or specially selected low-boron HEPA media
Panneau épaisseur66–90 mm overall frame depth
Largeur effective305 - 610 mm Largeur nominale du visage
Longueur maximaleJusqu'à 1220 mm de longueur nominale du visage
Acier face épaisseur0.4–0.6 mm low-shedding stainless-steel or coated faceguard
Densité CoreApproximately 20–35 kg/m³ equivalent membrane-pack density
Conductivité thermiqueApproximately 0.031–0.041 W/(m·K) for the dry low-boron membrane pack
surface finieNatural anodized aluminium with low-outgassing white or stainless protective grid
Type jointPolyurethane gel channel, closed-cell gasket or extruded knife-edge seal
CustomisationDisponible en fonction de l'application prévue et de l'environnement d'exploitation.

Options disponibles

H13 or H14 low-boron mediaGel, joint ou joint à tranchant de couteauLow-outgassing cleanroom component setGrille de protection unilatérale ou bilatérale

Planning a Low-Boron HEPA Filter specification?

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